clairex technologies, inc. 1301 east plano parkway plano, texas 75074-8524 phone: 972-265-4900 fax: 972-265 4949 www.clairex. com CLD370F plastic pin photodiode clairex ? technologies, inc. december, 2001 features ? fast switching speed ? low junction capacitance ? 850 nm peak response ? large photosensitive area ? sharp cutoff to visible wavelengths ? 30 acceptance angle description the CLD370F is a high gain silicon photodiode mounted in a t-1? (5mm) dark plastic package. the chip has an active area of approximately 0.080" x 0.080" (4 square mm) and is intended for use as an infrared sensor. the dark tinting of the package effectively attenuates wavelengths shorter than 700nm eliminating most visible light interference. absolute maximum ratings (t a = 25c unless otherwise stated) storage temperature????????????????????-40c to +125c operating temperature??????????????????? -40c to +100c lead soldering temperature (1) ?????????????????????260c continuous power dissipation (2) ???????????????????150mw notes: 1. 0.06? (1.5mm) from the header for 5 seconds maximum 2. derate linearly 1.6mw/c fr om 25c free air temperature to t a = +100c. 3. protruding resin under flange is 0.06" (1.5mm) max. clairex reserves the right to make changes at any time to improve design and to provide the best possible product. 0.040 (1.02) 0.06 (1.5) max. 0.020 (0.50) sq. nom. all dimensions are in inches (mm). anode cathode 0.310 (7.87) 0.290 (7.37) 0.23 (5.9) 0.100 (2.54) nom. 1.0 (25.4) min. 0.20 (5.05) all dimensions are in inches (millimeters) see note 3 electrical characteristics (ta = 25c unless otherwise noted) symbol parameter min typ max units test conditions i sc short-circuit current (1) 5.0 - 10.0 60.0 - - a a v r = 5v, e e = 0.1mw/cm 2 v r = 5v, e e = 1.0mw/cm 2 i d dark current - - 30 na v r = 10v, e e = 0 v br reverse breakdown 30 - - v i r = 100 a, e e = 0 c j junction capacitance - 25 - pf v r = 3v, e e = 0. f = 1mhz v o open circuit voltage - 350 - mv e e = 0.1mw/cm 2 hp total angle at half sensitivity points - 60 - deg. t r , t f output rise and fall time (1) - 30 - ns r l = 1k ? , v r = 10v note: 1. radiation source is an aluminum gallium ars enide ired operating at a peak wavelength of 850nm. ? revised 3/15/06 4 .com u datasheet
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